CSD23280F3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD23280F3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 73 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.116 Ohm
Encapsulados: LGA0.73X0.64
Búsqueda de reemplazo de CSD23280F3 MOSFET
- Selecciónⓘ de transistores por parámetros
CSD23280F3 datasheet
csd23201w10.pdf
CSD23201W10 www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010 P-Channel NexFET Power MOSFET Check for Samples CSD23201W10 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 12 V Small Footprint 1mm 1mm Qg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm Height Qgd Gate Charge Gate to Drain 0.26 nC Pb Free VGS = 1.5V 110
csd23202w10.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23202W10 SLPS506 AUGUST 2014 CSD23202W10 12-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mm VDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm Height Qg Gate Charge Total ( 4.
csd23203w.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23203W SLPS533 DECEMBER 2014 CSD23203W 8 V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 8 V Small Footprint Qg Gate Charge Total ( 4.5 V) 4.9 nC Low Profile 0.62
Otros transistores... YJS4409A, YJS4606A, YJS8205A, CSD15380F3, CSD17581Q5A, CSD17585F5, CSD18543Q3A, CSD19538Q3A, IRLZ44N, CSD86360Q5D, CSD87333Q3D, CSD87335Q3D, CSD87355Q5D, CSD87384M, CSD87588N, CSD88537ND, TPS1100
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