All MOSFET. CSD23280F3 Datasheet

 

CSD23280F3 Datasheet and Replacement


   Type Designator: CSD23280F3
   Marking Code: 5
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 0.95 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.116 Ohm
   Package: LGA0.73X0.64
 

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CSD23280F3 Datasheet (PDF)

 ..1. Size:1364K  texas
 csd23280f3.pdf pdf_icon

CSD23280F3

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD23280F3ZHCSEX4A APRIL 2016 REVISED AUGUST 2017CSD23280F3 12V P FemtoFETMOSFET1 1 TA = 25C Qg QgdVDS 12 V Qg

 8.1. Size:141K  texas
 csd23201w10.pdf pdf_icon

CSD23280F3

CSD23201W10www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010P-Channel NexFET Power MOSFETCheck for Samples: CSD23201W101FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small Footprint 1mm 1mmQg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm HeightQgd Gate Charge Gate to Drain 0.26 nC Pb FreeVGS = 1.5V 110

 8.2. Size:1051K  texas
 csd23202w10.pdf pdf_icon

CSD23280F3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23202W10SLPS506 AUGUST 2014CSD23202W10 12-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mmVDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm HeightQg Gate Charge Total (4.

 8.3. Size:1038K  texas
 csd23203w.pdf pdf_icon

CSD23280F3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23203WSLPS533 DECEMBER 2014CSD23203W 8 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 8 V Small FootprintQg Gate Charge Total (4.5 V) 4.9 nC Low Profile 0.62

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Keywords - CSD23280F3 MOSFET datasheet

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