TPS1101Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPS1101Y
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.791 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: CHIP
Búsqueda de reemplazo de TPS1101Y MOSFET
TPS1101Y Datasheet (PDF)
tps1101 tps1101y.pdf

TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP
tps1101d tps1101pwr.pdf

TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP
tps1100d tps1100pw.pdf

TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin
tps1100 tps1100y.pdf

TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin
Otros transistores... CSD87335Q3D , CSD87355Q5D , CSD87384M , CSD87588N , CSD88537ND , TPS1100 , TPS1100Y , TPS1101 , 2SK3878 , TPS1120 , TPS1120Y , TMA10N60H , TMA10N65H , TMP10N65H , TMA10N80H , TMA12N50H , TMA12N65H .
History: BSC750N10NDG | AP3310GH | SWD7N65DA | BSP030 | STB100N6F7 | 2SK1211-01 | SWU12N70D
History: BSC750N10NDG | AP3310GH | SWD7N65DA | BSP030 | STB100N6F7 | 2SK1211-01 | SWU12N70D



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188