TMP160N08A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TMP160N08A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 283 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 520 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO220
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TMP160N08A Datasheet (PDF)
tmb160n08a tmp160n08a.pdf
TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)
tmp160n10a.pdf
TMP160N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter
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TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A
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TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A
tmp16n60 tmpf16n60.pdf
TMP16N60/TMPF16N60TMP16N60G/TMPF16N60GVDSS = 660 V @TjmaxFeaturesID = 16A Low gate chargeRDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHSTMP16N60G / TMPF16N60G
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RFM5P15
History: RFM5P15
Liste
Recientemente añadidas las descripciónes de los transistores:
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