TPD60R600MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPD60R600MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 29 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO252
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TPD60R600MFD Datasheet (PDF)
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Otros transistores... TPA60R3K4C , TPP60R3K4C , TPU60R3K4C , TPD60R3K4C , TPA60R530M , TPD60R530M , TPU60R530M , TPA60R600MFD , 5N50 , TPA65R070D , TPB65R070D , TPP65R070D , TPW65R070D , TPA65R090M , TPA65R100MFD , TPV65R100MFD , TPW65R100MFD .
History: WM02DN080C | APM7318KC | CPH3430 | 2SJ476-01L | SVSP14N65FJHE2 | AO3454 | PSMN027-100XS
History: WM02DN080C | APM7318KC | CPH3430 | 2SJ476-01L | SVSP14N65FJHE2 | AO3454 | PSMN027-100XS



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