TPD60R600MFD Todos los transistores

 

TPD60R600MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPD60R600MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de TPD60R600MFD MOSFET

   - Selección ⓘ de transistores por parámetros

 

TPD60R600MFD Datasheet (PDF)

 ..1. Size:591K  cn wuxi unigroup
 tpa60r600mfd tpd60r600mfd.pdf pdf_icon

TPD60R600MFD

TPA60R600MFD,TPD60R600MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l

 8.1. Size:738K  cn wuxi unigroup
 tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf pdf_icon

TPD60R600MFD

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.2. Size:451K  cn wuxi unigroup
 tpd60r1k5mfd.pdf pdf_icon

TPD60R600MFD

TPD60R1K5MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switc

 8.3. Size:578K  cn wuxi unigroup
 tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf pdf_icon

TPD60R600MFD

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information

MOSTRAR MÁS

Otros transistores... TPA60R3K4C , TPP60R3K4C , TPU60R3K4C , TPD60R3K4C , TPA60R530M , TPD60R530M , TPU60R530M , TPA60R600MFD , 5N50 , TPA65R070D , TPB65R070D , TPP65R070D , TPW65R070D , TPA65R090M , TPA65R100MFD , TPV65R100MFD , TPW65R100MFD .

History: TK65S04K3L | IRFP2907

 

 
Back to Top

 


 
.