TPD60R600MFD
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPD60R600MFD
Marking Code: 60R600MFD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 63
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14.2
nC
trⓘ - Rise Time: 61
nS
Cossⓘ -
Output Capacitance: 29
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO252
TPD60R600MFD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPD60R600MFD
Datasheet (PDF)
..1. Size:591K cn wuxi unigroup
tpa60r600mfd tpd60r600mfd.pdf
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