TPA65R070D Todos los transistores

 

TPA65R070D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPA65R070D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 71 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO220F
 

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TPA65R070D Datasheet (PDF)

 ..1. Size:773K  cn wuxi unigroup
 tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf pdf_icon

TPA65R070D

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 7.1. Size:497K  cn wuxi unigroup
 tpa65r090m.pdf pdf_icon

TPA65R070D

TPA65R090M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 8.1. Size:554K  cn wuxi unigroup
 tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPA65R070D

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 8.2. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPA65R070D

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

MOSTRAR MÁS

Otros transistores... TPP60R3K4C , TPU60R3K4C , TPD60R3K4C , TPA60R530M , TPD60R530M , TPU60R530M , TPA60R600MFD , TPD60R600MFD , IRFP064N , TPB65R070D , TPP65R070D , TPW65R070D , TPA65R090M , TPA65R100MFD , TPV65R100MFD , TPW65R100MFD , TPA65R160C .

History: 5N65G | APT5010JVRU3

 

 
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