TPA65R070D Specs and Replacement
Type Designator: TPA65R070D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 71 nS
Cossⓘ -
Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
TPA65R070D datasheet
..1. Size:773K cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf 
TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse... See More ⇒
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tpa65r190mfd.pdf
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tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf
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tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf
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Detailed specifications: TPP60R3K4C, TPU60R3K4C, TPD60R3K4C, TPA60R530M, TPD60R530M, TPU60R530M, TPA60R600MFD, TPD60R600MFD, AO4468, TPB65R070D, TPP65R070D, TPW65R070D, TPA65R090M, TPA65R100MFD, TPV65R100MFD, TPW65R100MFD, TPA65R160C
Keywords - TPA65R070D MOSFET specs
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