TPP65R070D Todos los transistores

 

TPP65R070D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPP65R070D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 71 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO220
 

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TPP65R070D Datasheet (PDF)

 ..1. Size:773K  cn wuxi unigroup
 tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf pdf_icon

TPP65R070D

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 ..2. Size:554K  cn wuxi unigroup
 tpb65r070d tpp65r070d.pdf pdf_icon

TPP65R070D

TPB65R070D,TPP65R070D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consum

 6.1. Size:753K  cn wuxi unigroup
 tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdf pdf_icon

TPP65R070D

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

 8.1. Size:554K  cn wuxi unigroup
 tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPP65R070D

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

MOSTRAR MÁS

Otros transistores... TPD60R3K4C , TPA60R530M , TPD60R530M , TPU60R530M , TPA60R600MFD , TPD60R600MFD , TPA65R070D , TPB65R070D , IRFZ44N , TPW65R070D , TPA65R090M , TPA65R100MFD , TPV65R100MFD , TPW65R100MFD , TPA65R160C , TPB65R160C , TPP65R160C .

History: STP19NB20 | DH009N02

 

 
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