TPA65R100MFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPA65R100MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 28.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 123 nS
Cossⓘ - Capacitancia de salida: 106 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TPA65R100MFD MOSFET
- Selecciónⓘ de transistores por parámetros
TPA65R100MFD datasheet
tpa65r100mfd tpv65r100mfd tpw65r100mfd.pdf
TPA65R100MFD,TPV65R100MFD,TPW65R100MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide a
tpp65r160c tpa65r160c tpv65r160c.pdf
TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf
TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
tpa65r190mfd.pdf
TPA65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh
Otros transistores... TPU60R530M, TPA60R600MFD, TPD60R600MFD, TPA65R070D, TPB65R070D, TPP65R070D, TPW65R070D, TPA65R090M, IRF840, TPV65R100MFD, TPW65R100MFD, TPA65R160C, TPB65R160C, TPP65R160C, TPR65R160C, TPV65R160C, TPA65R170M
History: STB27NM60ND
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
Popular searches
2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent | 2sa1370 | 4508nh mosfet
