TPA65R100MFD Todos los transistores

 

TPA65R100MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPA65R100MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 28.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 123 nS
   Cossⓘ - Capacitancia de salida: 106 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220F
 

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TPA65R100MFD Datasheet (PDF)

 ..1. Size:649K  cn wuxi unigroup
 tpa65r100mfd tpv65r100mfd tpw65r100mfd.pdf pdf_icon

TPA65R100MFD

TPA65R100MFD,TPV65R100MFD,TPW65R100MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide a

 7.1. Size:554K  cn wuxi unigroup
 tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPA65R100MFD

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 7.2. Size:947K  cn wuxi unigroup
 tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPA65R100MFD

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:481K  cn wuxi unigroup
 tpa65r190mfd.pdf pdf_icon

TPA65R100MFD

TPA65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

MOSTRAR MÁS

Otros transistores... TPU60R530M , TPA60R600MFD , TPD60R600MFD , TPA65R070D , TPB65R070D , TPP65R070D , TPW65R070D , TPA65R090M , IRF840 , TPV65R100MFD , TPW65R100MFD , TPA65R160C , TPB65R160C , TPP65R160C , TPR65R160C , TPV65R160C , TPA65R170M .

History: STP19NB20FP | SIR770DP | MS85N06 | 2SK2533 | HAT3015R | 2SK3113 | FTF16N06G

 

 
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