Справочник MOSFET. TPA65R100MFD

 

TPA65R100MFD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPA65R100MFD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 123 ns
   Cossⓘ - Выходная емкость: 106 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

TPA65R100MFD Datasheet (PDF)

 ..1. Size:649K  cn wuxi unigroup
tpa65r100mfd tpv65r100mfd tpw65r100mfd.pdfpdf_icon

TPA65R100MFD

TPA65R100MFD,TPV65R100MFD,TPW65R100MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide a

 7.1. Size:554K  cn wuxi unigroup
tpp65r160c tpa65r160c tpv65r160c.pdfpdf_icon

TPA65R100MFD

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 7.2. Size:947K  cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdfpdf_icon

TPA65R100MFD

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:481K  cn wuxi unigroup
tpa65r190mfd.pdfpdf_icon

TPA65R100MFD

TPA65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

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History: IRFNG40 | SQJ460AEP | STN2NE10L | IRF6217 | 2SK56 | IRC8405 | 7N65KG-T2Q-T

 

 
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