TPB65R170M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB65R170M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 59 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
Paquete / Cubierta: TO263
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TPB65R170M Datasheet (PDF)
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Otros transistores... TPV65R100MFD , TPW65R100MFD , TPA65R160C , TPB65R160C , TPP65R160C , TPR65R160C , TPV65R160C , TPA65R170M , IRFP260N , TPC65R170M , TPP65R170M , TPV65R170M , TPW65R170M , TPA65R180D , TPA65R190MFD , TPA65R1K5M , TPD65R1K5M .
History: MTNN8451KQ8 | CJ3415 | MRF136 | TPCS8209 | IXTA98N075T | SFF25P20S2I-02 | AONP36332
History: MTNN8451KQ8 | CJ3415 | MRF136 | TPCS8209 | IXTA98N075T | SFF25P20S2I-02 | AONP36332



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