TPB65R170M Datasheet and Replacement
Type Designator: TPB65R170M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO263
TPB65R170M substitution
TPB65R170M Datasheet (PDF)
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf
TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf
TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf
TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf
TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct
Datasheet: TPV65R100MFD , TPW65R100MFD , TPA65R160C , TPB65R160C , TPP65R160C , TPR65R160C , TPV65R160C , TPA65R170M , IRFP260N , TPC65R170M , TPP65R170M , TPV65R170M , TPW65R170M , TPA65R180D , TPA65R190MFD , TPA65R1K5M , TPD65R1K5M .
History: IXFT30N60X | APQ84SN06A
Keywords - TPB65R170M MOSFET datasheet
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History: IXFT30N60X | APQ84SN06A
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