TPU65R1K5M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPU65R1K5M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.7 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET TPU65R1K5M

TPU65R1K5M Datasheet (PDF)

..1. Size:698K cn wuxi unigroup
tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdf

TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los

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8.4. Size:876K cn wuxi unigroup
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8.5. Size:673K cn wuxi unigroup
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TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevice

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