TPU65R1K5M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPU65R1K5M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7.7 ns
Cossⓘ - Выходная емкость: 10 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO251
Аналог (замена) для TPU65R1K5M
TPU65R1K5M Datasheet (PDF)
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Список транзисторов
Обновления
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