TPC65R360M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC65R360M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69.5 nS
Cossⓘ - Capacitancia de salida: 32 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Encapsulados: TO262
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TPC65R360M datasheet
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf
TPA65R360M,TPB65R360M,TPC65R360M, TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com
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Otros transistores... TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D, TPA65R300MFD, TPA65R360M, TPB65R360M, IRFP260, TPD65R360M, TPP65R360M, TPR65R360M, TPU65R360M, TPA65R380D, TPD65R380D, TPA65R520D, TPD65R520D
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