TPC65R360M
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC65R360M
Marking Code: 65R360M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 69.5
nS
Cossⓘ -
Output Capacitance: 32
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
TO262
TPC65R360M
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC65R360M
Datasheet (PDF)
..1. Size:1239K cn wuxi unigroup
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