All MOSFET. TPC65R360M Datasheet

 

TPC65R360M Datasheet and Replacement


   Type Designator: TPC65R360M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69.5 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO262
 

 TPC65R360M substitution

   - MOSFET ⓘ Cross-Reference Search

 

TPC65R360M Datasheet (PDF)

 ..1. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPC65R360M

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 7.1. Size:750K  cn wuxi unigroup
tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdf pdf_icon

TPC65R360M

TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:947K  cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPC65R360M

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 8.2. Size:741K  cn wuxi unigroup
tpp65r600c tpa65r600c tpu65r600c tpd65r600c tpc65r600c tpb65r600c.pdf pdf_icon

TPC65R360M

TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C, TPB65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

Datasheet: TPB65R280D , TPC65R280D , TPD65R280D , TPP65R280D , TPU65R280D , TPA65R300MFD , TPA65R360M , TPB65R360M , 8205A , TPD65R360M , TPP65R360M , TPR65R360M , TPU65R360M , TPA65R380D , TPD65R380D , TPA65R520D , TPD65R520D .

History: UT5504 | ME60P06T-G | STY34NB50 | BUK953R2-40E | SLD80R850SJ | MMN8822 | AP6N6R5LMT-L

Keywords - TPC65R360M MOSFET datasheet

 TPC65R360M cross reference
 TPC65R360M equivalent finder
 TPC65R360M lookup
 TPC65R360M substitution
 TPC65R360M replacement

 

 
Back to Top

 


 
.