TPA70R600M Todos los transistores

 

TPA70R600M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPA70R600M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

TPA70R600M Datasheet (PDF)

 ..1. Size:1095K  cn wuxi unigroup
 tpa70r600m tpb70r600m tpd70r600m tpr70r600m tpu70r600m.pdf pdf_icon

TPA70R600M

TPA70R600M,TPB70R600M,TPD70R600M,TPR70R600M,TPU70R600MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conductio

 ..2. Size:499K  cn wuxi unigroup
 tpa70r600m.pdf pdf_icon

TPA70R600M

TPA70R600M Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 8.1. Size:913K  cn wuxi unigroup
 tpa70r190c tpc70r190c tpp70r190c tpv70r190c.pdf pdf_icon

TPA70R600M

TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses

 8.2. Size:907K  cn wuxi unigroup
 tpa70r360m tpd70r360m tpp70r360m tpu70r360m.pdf pdf_icon

TPA70R600M

TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FMC20N50E | IRLR3715

 

 
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