TPA73R190M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPA73R190M
Código: 73R190M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 34 W
Voltaje máximo drenador - fuente |Vds|: 730 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 38 nS
Conductancia de drenaje-sustrato (Cd): 61 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET TPA73R190M
TPA73R190M Datasheet (PDF)
tpa73r190m.pdf
TPA73R190M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
tpa73r400m.pdf
TPA73R400M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
tpa73r300m.pdf
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