TPA73R190M
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPA73R190M
Marking Code: 73R190M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 730
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 61
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
TO220F
TPA73R190M
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPA73R190M
Datasheet (PDF)
..1. Size:482K cn wuxi unigroup
tpa73r190m.pdf
TPA73R190M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
8.1. Size:498K cn wuxi unigroup
tpa73r400m.pdf
TPA73R400M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
8.2. Size:498K cn wuxi unigroup
tpa73r300m.pdf
TPA73R300M Wuxi Unigroup Microelectronics Co.,Ltd 730V Super-Junction Power MOSFET DESCRIPTION 730V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
Datasheet: WPB4002
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