TPW80R300C Todos los transistores

 

TPW80R300C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPW80R300C
   Código: 80R300C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 151 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 15 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 46 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 116 pF
   Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
   Paquete / Cubierta: TO247

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TPW80R300C Datasheet (PDF)

 ..1. Size:1210K  cn wuxi unigroup
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPW80R300C TPW80R300C

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 5.1. Size:686K  cn wuxi unigroup
tpw80r300mfd.pdf

TPW80R300C TPW80R300C

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 8.1. Size:683K  cn wuxi unigroup
tpw80r200mfd.pdf

TPW80R300C TPW80R300C

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 8.2. Size:567K  cn wuxi unigroup
tpa80r250a tpp80r250a tpw80r250a.pdf

TPW80R300C TPW80R300C

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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