TPB65R075DFD Todos los transistores

 

TPB65R075DFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPB65R075DFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO263
 

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TPB65R075DFD Datasheet (PDF)

 ..1. Size:753K  cn wuxi unigroup
 tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdf pdf_icon

TPB65R075DFD

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

 6.1. Size:773K  cn wuxi unigroup
 tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf pdf_icon

TPB65R075DFD

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 6.2. Size:554K  cn wuxi unigroup
 tpb65r070d tpp65r070d.pdf pdf_icon

TPB65R075DFD

TPB65R070D,TPP65R070D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consum

 8.1. Size:832K  cn wuxi unigroup
 tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf pdf_icon

TPB65R075DFD

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

MOSTRAR MÁS

Otros transistores... TPP80R300C , TPW80R300C , TPA80R750C , TPB80R750C , TPC80R750C , TPD80R750C , TPP80R750C , TPU80R750C , IRFP064N , TPP65R075DFD , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD .

History: AUIRFB3006 | CEP84A4 | BSC123N08NS3G | 2SK2101-01MR | IRFP9133 | RHP030N03T100 | AM5931P

 

 
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