TPB65R075DFD Specs and Replacement
Type Designator: TPB65R075DFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ -
Output Capacitance: 123 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO263
TPB65R075DFD substitution
- MOSFET ⓘ Cross-Reference Search
TPB65R075DFD datasheet
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TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic... See More ⇒
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Detailed specifications: TPP80R300C, TPW80R300C, TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C, AO4468, TPP65R075DFD, TPW65R075DFD, TPB65R120M, TPP65R120M, TPR65R120M, TPW65R120M, TPB65R135MFD, TPP65R135MFD
Keywords - TPB65R075DFD MOSFET specs
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