TPP65R075DFD Todos los transistores

 

TPP65R075DFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPP65R075DFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO220
 

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TPP65R075DFD Datasheet (PDF)

 ..1. Size:753K  cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdf pdf_icon

TPP65R075DFD

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

 6.1. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf pdf_icon

TPP65R075DFD

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 6.2. Size:554K  cn wuxi unigroup
tpb65r070d tpp65r070d.pdf pdf_icon

TPP65R075DFD

TPB65R070D,TPP65R070D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consum

 8.1. Size:554K  cn wuxi unigroup
tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPP65R075DFD

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

Otros transistores... TPW80R300C , TPA80R750C , TPB80R750C , TPC80R750C , TPD80R750C , TPP80R750C , TPU80R750C , TPB65R075DFD , BS170 , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD .

History: TSM9N90CZ | IRFZ44ZPBF | BUZ356 | 2SK1723 | TPM6401S3 | AP2N050H | LNN06R062

 

 
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