TPP65R075DFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPP65R075DFD
Маркировка: 65R075DFD
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 312 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 45 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 81 nC
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 123 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TO220
Аналог (замена) для TPP65R075DFD
TPP65R075DFD Datasheet (PDF)
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