TPU60R1K4M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPU60R1K4M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 15 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de TPU60R1K4M MOSFET
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TPU60R1K4M datasheet
tpd60r1k4m tpu60r1k4m.pdf
TPD60R1K4M,TPU60R1K4M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro
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Otros transistores... TPW65R120M, TPB65R135MFD, TPP65R135MFD, TPW65R135MFD, TPB70R950M, TPD70R950M, TPD50R3K8D, TPD60R1K4M, IRLZ44N, TPD60R1K5MFD, TPD60R330M, TPD65R700MFD, TPD70R1K5M, TPD80R900M, TPU80R900M, TPG60R070DFDH, TPG65R125MH
History: BL9N20-D | TPP50R250C
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