TPU60R1K4M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPU60R1K4M
Маркировка: 60R1K4M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 28 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7.1 nC
Время нарастания (tr): 62 ns
Выходная емкость (Cd): 15 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO251
Аналог (замена) для TPU60R1K4M
TPU60R1K4M Datasheet (PDF)
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