TPD60R580C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPD60R580C
Código: 60R580C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 63 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 14.5 nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 31 pF
Resistencia entre drenaje y fuente RDS(on): 0.58 Ohm
Paquete / Cubierta: TO252
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