All MOSFET. TPD60R580C Datasheet

 

TPD60R580C Datasheet and Replacement


   Type Designator: TPD60R580C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO252
 

 TPD60R580C substitution

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TPD60R580C Datasheet (PDF)

 ..1. Size:741K  cn wuxi unigroup
tpp60r580c tpa60r580c tpu60r580c tpd60r580c tpc60r580c tpb60r580c.pdf pdf_icon

TPD60R580C

TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 7.1. Size:638K  cn wuxi unigroup
tpa60r530m tpd60r530m tpu60r530m.pdf pdf_icon

TPD60R580C

TPA60R530M,TPD60R530M,TPU60R530MWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

 8.1. Size:738K  cn wuxi unigroup
tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf pdf_icon

TPD60R580C

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.2. Size:451K  cn wuxi unigroup
tpd60r1k5mfd.pdf pdf_icon

TPD60R580C

TPD60R1K5MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switc

Datasheet: TPA60R350C , TPU60R350C , TPD60R350C , TPC60R350C , TPB60R350C , TPP60R580C , TPA60R580C , TPU60R580C , AON7506 , TPC60R580C , TPB60R580C , TPP60R840C , TPA60R840C , TPU60R840C , TPD60R840C , TPC60R840C , TPB60R840C .

History: STL85N6F3 | S10H06R | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

Keywords - TPD60R580C MOSFET datasheet

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