TPD60R580C MOSFET. Datasheet pdf. Equivalent
Type Designator: TPD60R580C
Marking Code: 60R580C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 31 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
TPD60R580C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPD60R580C Datasheet (PDF)
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE65T260K
