TPD60R580C Specs and Replacement
Type Designator: TPD60R580C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 31 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
TPD60R580C substitution
- MOSFET ⓘ Cross-Reference Search
TPD60R580C datasheet
tpp60r580c tpa60r580c tpu60r580c tpd60r580c tpc60r580c tpb60r580c.pdf
TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package ... See More ⇒
tpa60r530m tpd60r530m tpu60r530m.pdf
TPA60R530M,TPD60R530M,TPU60R530M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with... See More ⇒
tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf
TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
tpd60r1k5mfd.pdf
TPD60R1K5MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switc... See More ⇒
Detailed specifications: TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C, TPP60R580C, TPA60R580C, TPU60R580C, IRFB3607, TPC60R580C, TPB60R580C, TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C
Keywords - TPD60R580C MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: TPCP8004
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