TPU65R380C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPU65R380C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO251

 Búsqueda de reemplazo de TPU65R380C MOSFET

- Selecciónⓘ de transistores por parámetros

 

TPU65R380C datasheet

 ..1. Size:750K  cn wuxi unigroup
 tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdf pdf_icon

TPU65R380C

TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 7.1. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPU65R380C

TPA65R360M,TPB65R360M,TPC65R360M, TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 7.2. Size:876K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPU65R380C

TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:673K  cn wuxi unigroup
 tpa65r360m tpd65r360m tpp65r360m tpu65r360m.pdf pdf_icon

TPU65R380C

TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l Very low FOM RDS(on) Qg l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device

MOSTRAR MÁS

Otros transistores... TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C, TPP65R380C, TPA65R380C, 4N60, TPD65R380C, TPC65R380C, TPB65R380C, TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C