TPU65R380C. Аналоги и основные параметры

Наименование производителя: TPU65R380C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 78 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 50 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm

Тип корпуса: TO251

Аналог (замена) для TPU65R380C

- подборⓘ MOSFET транзистора по параметрам

 

TPU65R380C даташит

 ..1. Size:750K  cn wuxi unigroup
 tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdf pdf_icon

TPU65R380C

TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 7.1. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPU65R380C

TPA65R360M,TPB65R360M,TPC65R360M, TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 7.2. Size:876K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPU65R380C

TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:673K  cn wuxi unigroup
 tpa65r360m tpd65r360m tpp65r360m tpu65r360m.pdf pdf_icon

TPU65R380C

TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l Very low FOM RDS(on) Qg l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C, TPP65R380C, TPA65R380C, 4N60, TPD65R380C, TPC65R380C, TPB65R380C, TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C