TPW60R120MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPW60R120MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 219 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 49.3 nS
Cossⓘ - Capacitancia de salida: 94.1 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: TO247
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TPW60R120MFD Datasheet (PDF)
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Otros transistores... TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C , TPP90R350A , TPA90R350A , TPR60R120MFD , AON7403 , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M .
History: NCEPB302G | SI4459ADY | 2P308G9 | 2SK2414-Z | GP1M009A090XX | 2SK3546J | NTLJS2103PTBG
History: NCEPB302G | SI4459ADY | 2P308G9 | 2SK2414-Z | GP1M009A090XX | 2SK3546J | NTLJS2103PTBG



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