TPW60R120MFD Datasheet and Replacement
Type Designator: TPW60R120MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 94.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO247
TPW60R120MFD substitution
TPW60R120MFD Datasheet (PDF)
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TPR60R120MFD,TPW60R120MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l
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TPW60R040MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
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TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device
Datasheet: TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C , TPP90R350A , TPA90R350A , TPR60R120MFD , AON7403 , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M .
Keywords - TPW60R120MFD MOSFET datasheet
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History: 2SK3546J | AP30T10GH



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