TPW60R120MFD Datasheet and Replacement
Type Designator: TPW60R120MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 94.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO247
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TPW60R120MFD Datasheet (PDF)
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TPW60R040MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
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TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SML20J97 | DMNH10H028SCT | IRLS4030 | HM4886E | ZXMC4559DN8 | IRF7416TRPBF | WML11N80M3
Keywords - TPW60R120MFD MOSFET datasheet
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History: SML20J97 | DMNH10H028SCT | IRLS4030 | HM4886E | ZXMC4559DN8 | IRF7416TRPBF | WML11N80M3



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