TPW65R044MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPW65R044MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 72 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 83 nS
Cossⓘ - Capacitancia de salida: 221 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Paquete / Cubierta: TO247
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TPW65R044MFD Datasheet (PDF)
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Otros transistores... TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M , AO4468 , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A .
History: CTLDM8002A-M621 | APQ110SN5EA | P8010BD | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074
History: CTLDM8002A-M621 | APQ110SN5EA | P8010BD | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074



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