TPW65R044MFD Todos los transistores

 

TPW65R044MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPW65R044MFD
   Código: 65R044MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 500 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 72 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 165 nC
   Tiempo de subida (tr): 83 nS
   Conductancia de drenaje-sustrato (Cd): 221 pF
   Resistencia entre drenaje y fuente RDS(on): 0.044 Ohm
   Paquete / Cubierta: TO247

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TPW65R044MFD Datasheet (PDF)

 ..1. Size:452K  cn wuxi unigroup
tpw65r044mfd.pdf

TPW65R044MFD
TPW65R044MFD

TPW65R044MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 6.1. Size:452K  cn wuxi unigroup
tpw65r040m.pdf

TPW65R044MFD
TPW65R044MFD

TPW65R040M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 7.1. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf

TPW65R044MFD
TPW65R044MFD

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 7.2. Size:753K  cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdf

TPW65R044MFD
TPW65R044MFD

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

 7.3. Size:442K  cn wuxi unigroup
tpv65r080c tpw65r080c.pdf

TPW65R044MFD
TPW65R044MFD

TPV65R080C, TPW65R080C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPV65R08

 7.4. Size:446K  cn wuxi unigroup
tpw65r090m.pdf

TPW65R044MFD
TPW65R044MFD

TPW65R090M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

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