TPW65R044MFD Todos los transistores

 

TPW65R044MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPW65R044MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 83 nS
   Cossⓘ - Capacitancia de salida: 221 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: TO247
 

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TPW65R044MFD Datasheet (PDF)

 ..1. Size:452K  cn wuxi unigroup
tpw65r044mfd.pdf pdf_icon

TPW65R044MFD

TPW65R044MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 6.1. Size:452K  cn wuxi unigroup
tpw65r040m.pdf pdf_icon

TPW65R044MFD

TPW65R040M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 7.1. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf pdf_icon

TPW65R044MFD

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 7.2. Size:753K  cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdf pdf_icon

TPW65R044MFD

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

Otros transistores... TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M , AO4468 , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A .

History: CTLDM8002A-M621 | APQ110SN5EA | P8010BD | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074

 

 
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