TPW65R044MFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPW65R044MFD
Маркировка: 65R044MFD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 72 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 165 nC
trⓘ - Время нарастания: 83 ns
Cossⓘ - Выходная емкость: 221 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
Тип корпуса: TO247
Аналог (замена) для TPW65R044MFD
TPW65R044MFD Datasheet (PDF)
tpw65r044mfd.pdf
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tpw65r090m.pdf
TPW65R090M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLP02N06L-D
History: BLP02N06L-D
Список транзисторов
Обновления
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