Справочник MOSFET. TPW65R044MFD

 

TPW65R044MFD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPW65R044MFD
   Маркировка: 65R044MFD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 72 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 165 nC
   trⓘ - Время нарастания: 83 ns
   Cossⓘ - Выходная емкость: 221 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

TPW65R044MFD Datasheet (PDF)

 ..1. Size:452K  cn wuxi unigroup
tpw65r044mfd.pdfpdf_icon

TPW65R044MFD

TPW65R044MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 6.1. Size:452K  cn wuxi unigroup
tpw65r040m.pdfpdf_icon

TPW65R044MFD

TPW65R040M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 7.1. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdfpdf_icon

TPW65R044MFD

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 7.2. Size:753K  cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdfpdf_icon

TPW65R044MFD

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

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History: 2N7002KTB | IXFC80N10

 

 
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