STU314D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GreenProductSTU314DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID28 @ VGS=10V 34 @ VGS=-10V30V 16A-30V -14A40 @ VGS=4.5V 55 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(

STU313DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID24 @ VGS=10V 33 @ VGS=-10V30V 16A-30V -15A35 @ VGS=4.5V 52 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(TC=25C unless

GreenProductS TU312DS amHop Microelectronics C orp.Oct 08 2008Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max24 @ VG S = 10V 34 @ VG S = -10V-30V -14A30V 18A36 @ VG S = 4.5V 54 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1

STU310DHSamHop Microelectronics Corp.May,28,2007Dual Enhancement Mode Field Effect Transistor ( NandP Channel)(N-C hannel) (PPRODUCT S UMMARY PRODUC T S UMMARY -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m W ) MaxW20 @ VGS =10V 30 @ VGS =-10V-30V -15A30V 19A28 @ VGS =4.5V 44 @ VGS =-4.5VD1 D2D1/D2G 1G 2S1G1S2S 1 N-ch S 2 P-chG2TO-252-4L