STU30N15 Todos los transistores

 

STU30N15 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STU30N15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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STU30N15 datasheet

 ..1. Size:146K  samhop
stu30n15 std30n15.pdf pdf_icon

STU30N15

Green Product STU/D30N15 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 22A 150V 62 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA (D-PAK) TO-251 (I-PAK) ABSOLUTE MAXIMUM RATING

 8.1. Size:141K  samhop
stu30n01 std30n01.pdf pdf_icon

STU30N15

STU30N01 Green Product STD30N01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 30A 30 @ VGS=10V 100V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A

 9.1. Size:195K  samhop
stu309dh.pdf pdf_icon

STU30N15

Green Product S TU309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 22 @ VG S = 10V 34 @ VG S = -10V -30V -14A 30V 18A 34 @ VG S = 4.5V 54 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1

 9.2. Size:174K  samhop
stu309d.pdf pdf_icon

STU30N15

S TU309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 23 @ VG S = 10V 35 @ VG S = -10V -30V -14A 30V 18A 35 @ VG S = 4.5V 55 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 S 1 N-ch S

Otros transistores... STU313D , FDB8832F085 , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , IRF830 , FDB8870F085 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH .

 

 

 


 
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