STU30N15 PDF and Equivalents Search

 

STU30N15 Specs and Replacement

Type Designator: STU30N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 26.5 nC

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: TO252 DPAK

STU30N15 substitution

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STU30N15 datasheet

 ..1. Size:146K  samhop
stu30n15 std30n15.pdf pdf_icon

STU30N15

Green Product STU/D30N15 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 22A 150V 62 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA (D-PAK) TO-251 (I-PAK) ABSOLUTE MAXIMUM RATING... See More ⇒

 8.1. Size:141K  samhop
stu30n01 std30n01.pdf pdf_icon

STU30N15

STU30N01 Green Product STD30N01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 30A 30 @ VGS=10V 100V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A... See More ⇒

 9.1. Size:195K  samhop
stu309dh.pdf pdf_icon

STU30N15

Green Product S TU309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 22 @ VG S = 10V 34 @ VG S = -10V -30V -14A 30V 18A 34 @ VG S = 4.5V 54 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1... See More ⇒

 9.2. Size:174K  samhop
stu309d.pdf pdf_icon

STU30N15

S TU309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 23 @ VG S = 10V 35 @ VG S = -10V -30V -14A 30V 18A 35 @ VG S = 4.5V 55 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 S 1 N-ch S... See More ⇒

Detailed specifications: STU313D , FDB8832F085 , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , IRF830 , FDB8870F085 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH .

Keywords - STU30N15 MOSFET specs

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