FDB8870F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB8870F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 165 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 160 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 106 nC
Resistencia entre drenaje y fuente RDS(on): 0.0039 Ohm
Paquete / Cubierta: TO263 D2PAK
Búsqueda de reemplazo de MOSFET FDB8870F085
FDB8870F085 Datasheet (PDF)
fdb8870 f085.pdf
July 2010FDB8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for
fdb8870.pdf
May 2008tmFDB8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for
fdb8870.pdf
isc N-Channel MOSFET Transistor FDB8870FEATURESDrain Current : I =160A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =3.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... FDB8832F085 , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , STU30N15 , IRFZ48N , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH , FDC2512 .
