FDB8870F085 Datasheet and Replacement
Type Designator: FDB8870F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO263 D2PAK
FDB8870F085 substitution
FDB8870F085 Datasheet (PDF)
fdb8870 f085.pdf
July 2010FDB8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for
fdb8870.pdf
May 2008tmFDB8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for
fdb8870.pdf
isc N-Channel MOSFET Transistor FDB8870FEATURESDrain Current : I =160A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =3.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: FDB8832F085 , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , STU30N15 , EMB04N03H , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH , FDC2512 .
History: STU310DH | FDB8870 | IRFS5620PBF
Keywords - FDB8870F085 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STU310DH | FDB8870 | IRFS5620PBF
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