FDB8870F085 Specs and Replacement
Type Designator: FDB8870F085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Qg ⓘ - Total Gate Charge: 106 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
FDB8870F085 substitution
- MOSFET ⓘ Cross-Reference Search
FDB8870F085 datasheet
fdb8870 f085.pdf
July 2010 FDB8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for ... See More ⇒
fdb8870.pdf
May 2008 tm FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for... See More ⇒
fdb8870.pdf
isc N-Channel MOSFET Transistor FDB8870 FEATURES Drain Current I =160A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =3.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
Detailed specifications: FDB8832F085 , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , STU30N15 , IRLB3034 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH , FDC2512 .
Keywords - FDB8870F085 MOSFET specs
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