FDB8880 Todos los transistores

0 May 2008 tmM FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 11.6m , VGS = 10V, ID = 40A controllers. It has been op

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDB8880 FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =11.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

September 2006 FDB8832 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1m Features Applications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Conver

November 2005 FDB8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

December 2010 FDB8860 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.6m Features Applications RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A DC-DC Converters Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant FDB8860 Rev A2 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.

June 2010 _ FDB8860 F085 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.6m Features Applications RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A 12V Automotive Load Control Qg(5) = 89nC (Typ), VGS = 5V Start / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters

November 2005 FDB8878 N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14m General Descriptions Features rDS(ON) = 14m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 18m , VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con

July 2010 FDB8896_F085 N-Channel PowerTrench MOSFET 30V, 93A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for lo

July 2010 FDB8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for

2 May 2008 tmM FDB8874 N-Channel PowerTrench MOSFET 30V, 121A, 4.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.7m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.0m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized

May 2008 tm FDB8896 N-Channel PowerTrench MOSFET 30V, 93A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for l

May 2010 FDB8832_F085 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1m Features Applications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Convert

May 2008 tm FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDB8832 FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =1.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor FDB8876 FEATURES Drain Current I =121A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =4.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor FDB8860 FEATURES Drain Current I =31A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor FDB8878 FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor FDB8874 FEATURES Drain Current I =121A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =4.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor FDB8896 FEATURES Drain Current I =93A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor FDB8870 FEATURES Drain Current I =160A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =3.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid