FDB8880 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB8880
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 54 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 22 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm
Package: TO263 D2PAK
FDB8880 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB8880 Datasheet (PDF)
fdp8880 fdb8880.pdf
0May 2008tmMFDP8880 / FDB8880N-Channel PowerTrench MOSFET30V, 54A, 11.6mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 11.6m, VGS = 10V, ID = 40Acontrollers. It has been op
fdp8880 fdb8880.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb8880.pdf
isc N-Channel MOSFET Transistor FDB8880FEATURESDrain Current : I =54A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =11.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
fdb8832.pdf
September 2006FDB8832 N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.1m FeaturesApplications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Conver
fdb8876.pdf
November 2005FDB8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona
fdb8860.pdf
December 2010FDB8860N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.6m Features Applications RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A DC-DC Converters Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS CompliantFDB8860 Rev A22010 Fairchild Semiconductor Corporation1 www.fairchildsemi.
fdb8860 f085.pdf
June 2010_FDB8860 F085N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.6m Features Applications RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A 12V Automotive Load Control Qg(5) = 89nC (Typ), VGS = 5V Start / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters
fdb8878.pdf
November 2005FDB8878N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14mGeneral Descriptions Features rDS(ON) = 14m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 18m, VGS = 4.5V, ID = 36Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con
fdb8896 f085.pdf
July 2010FDB8896_F085N-Channel PowerTrench MOSFET30V, 93A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for lo
fdb8870 f085.pdf
July 2010FDB8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for
fdb8874.pdf
2May 2008tmMFDB8874N-Channel PowerTrench MOSFET30V, 121A, 4.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.7m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.0m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized
fdb8896.pdf
May 2008tmFDB8896N-Channel PowerTrench MOSFET30V, 93A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for l
fdb8832 f085.pdf
May 2010FDB8832_F085 N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.1m FeaturesApplications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Convert
fdb8870.pdf
May 2008tmFDB8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for
fdb8860.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb8832.pdf
isc N-Channel MOSFET Transistor FDB8832FEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =1.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdb8876.pdf
isc N-Channel MOSFET Transistor FDB8876FEATURESDrain Current : I =121A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
fdb8860.pdf
isc N-Channel MOSFET Transistor FDB8860FEATURESDrain Current : I =31A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =2.3m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdb8878.pdf
isc N-Channel MOSFET Transistor FDB8878FEATURESDrain Current : I =48A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
fdb8874.pdf
isc N-Channel MOSFET Transistor FDB8874FEATURESDrain Current : I =121A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
fdb8896.pdf
isc N-Channel MOSFET Transistor FDB8896FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdb8870.pdf
isc N-Channel MOSFET Transistor FDB8870FEATURESDrain Current : I =160A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =3.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , STU30N15 , FDB8870F085 , STU30N01 , IRFZ48N , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH , FDC2512 , FDC2612 , STU309D .
