VBM1206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBM1206
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 65 nC
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004(typ) Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET VBM1206
VBM1206 Datasheet (PDF)
vbm1206.pdf
VBM1206www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)a 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004@ VGS = 4.5 V10020200.005@ VGS = 2.5 V 95APPLICATIONS OR-ingTO-220AB Server DC/DCDGG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RAT
vbm1208n.pdf
VBM1208Nwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package200 950.070 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDG
vbm1203m.pdf
VBM1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RA
vbm1201k.pdf
VBM1201Kwww.VBsemi.comN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DG
vbm1201m.pdf
VBM1201Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-C
vbm1202m.pdf
VBM1202Mwww.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.20 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperatureQgd (nC) 39 Fast switchingConfiguration Single Fully avalanche ratedTO-220ABDGDRAIN
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
