VBM1206 Specs and Replacement

Type Designator: VBM1206

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 typ Ohm

Package: TO220AB

VBM1206 substitution

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VBM1206 datasheet

 ..1. Size:810K  cn vbsemi
 vbm1206.pdf pdf_icon

VBM1206

VBM1206 www.VBsemi.com N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A)a 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004@ VGS = 4.5 V 100 20 20 0.005@ VGS = 2.5 V 95 APPLICATIONS OR-ing TO-220AB Server DC/DC D G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RAT... See More ⇒

 8.1. Size:502K  cn vbsemi
 vbm1208n.pdf pdf_icon

VBM1206

VBM1208N www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G... See More ⇒

 8.2. Size:595K  cn vbsemi
 vbm1203m.pdf pdf_icon

VBM1206

VBM1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS =10V 10 200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RA... See More ⇒

 8.3. Size:1415K  cn vbsemi
 vbm1201k.pdf pdf_icon

VBM1206

VBM1201K www.VBsemi.com N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G ... See More ⇒

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Detailed specifications: VBM1104N, VBM1105, VBM1151N, VBM1158N, VBM1201K, VBM1201M, VBM1202M, VBM1203M, IRF3205, VBM1208N, VBM1302, VBM1303, VBM1307, VBL1307, VBM1310, VBM1402, VBM1405

Keywords - VBM1206 MOSFET specs

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