VBMB165R07 Todos los transistores

 

VBMB165R07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VBMB165R07
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1(typ) Ohm
   Paquete / Cubierta: TO220FP
 
   - Selección ⓘ de transistores por parámetros

 

VBMB165R07 Datasheet (PDF)

 ..1. Size:932K  cn vbsemi
vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf pdf_icon

VBMB165R07

VBM165R07 / VBMB165R07VBE165R07 / VBFB165R07www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy r

 0.1. Size:921K  cn vbsemi
vbm165r07s vbmb165r07s vbe165r07s vbfb165r07s.pdf pdf_icon

VBMB165R07

VBM165R07S / VBMB165R07SVBE165R07S / VBFB165R07Swww.VBsemi.comN hannel 650 D S Super Junc n Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.7 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0

 5.1. Size:1391K  cn vbsemi
vbmb165r02.pdf pdf_icon

VBMB165R07

VBMB165R02www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 4 Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5.2 Complia

 5.2. Size:1249K  cn vbsemi
vbmb165r04.pdf pdf_icon

VBMB165R07

VBMB165R04 www.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to Ro

Otros transistores... VBM15R13 , VBM1603 , VBM1606 , VBM1615 , VBM1638 , VBM165R02 , VBM165R04 , VBM165R07 , IRFB4227 , VBE165R07 , VBFB165R07 , VBM165R07S , VBMB165R07S , VBE165R07S , VBFB165R07S , VBM165R10 , VBMB165R10 .

History: 2SK3815

 

 
Back to Top

 


History: 2SK3815

VBMB165R07
  VBMB165R07
  VBMB165R07
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MPF7N65 | MPF4N65 | MP5N50 | MP13N50 | MDT80N06D | MDT40P10D | MDT35P10D | MD50N50 | MD40N50 | FTP06N06N | MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P

 

 

 
Back to Top

 

Popular searches

mj15015 | 13003 transistor datasheet | 2n3416 | bdx53c | k3563 | d882p | 2sb1560 | 2n1304

 


 
.