VBMB165R12 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBMB165R12

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 typ Ohm

Encapsulados: TO220FP

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VBMB165R12 datasheet

 ..1. Size:1339K  cn vbsemi
 vbm165r12 vbmb165r12 vbl165r12.pdf pdf_icon

VBMB165R12

VBM165R12 / VBMB165R12/ VBL165R12 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS)

 5.1. Size:1406K  cn vbsemi
 vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBMB165R12

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener

 5.2. Size:1284K  cn vbsemi
 vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf pdf_icon

VBMB165R12

VBM165R10 / VBMB165R10 VBE165R10 / VBFB165R10 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy

 5.3. Size:1167K  cn vbsemi
 vbmb165r18.pdf pdf_icon

VBMB165R12

VBMB165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche e

MOSTRAR MÁS

Otros transistores... VBE165R07S, VBFB165R07S, VBM165R10, VBMB165R10, VBE165R10, VBFB165R10, VBL165R10, VBM165R12, 2N7002, VBL165R12, VBM165R18, VBM165R20S, VBMB165R20S, VBP165R20S, VBL165R20S, VBM1680, VBM16R02