VBMB165R12 - параметры транзистора MOSFET, его аналоги, datasheet

VBMB165R12 Datasheet (PDF)

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vbm165r12 vbmb165r12 vbl165r12.pdf pdf_icon

VBM165R12 / VBMB165R12/ VBL165R12www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)

5.1. Size:1406K cn vbsemi
vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBM165R10 / VBMB165R10/ VBL165R10www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche ener

5.2. Size:1284K cn vbsemi
vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf pdf_icon

VBM165R10 / VBMB165R10VBE165R10 / VBFB165R10www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy

5.3. Size:1167K cn vbsemi
vbmb165r18.pdf pdf_icon

VBMB165R18www.VBsemi.comN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche e

Другие MOSFET... VBE165R07S , VBFB165R07S , VBM165R10 , VBMB165R10 , VBE165R10 , VBFB165R10 , VBL165R10 , VBM165R12 , K4145 , VBL165R12 , VBM165R18 , VBM165R20S , VBMB165R20S , VBP165R20S , VBL165R20S , VBM1680 , VBM16R02 .