VBL165R12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBL165R12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65(typ) Ohm
   Paquete / Cubierta: TO263

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VBL165R12 Datasheet (PDF)

..1. Size:1339K cn vbsemi
vbm165r12 vbmb165r12 vbl165r12.pdf

VBM165R12 / VBMB165R12/ VBL165R12www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)

6.1. Size:1102K cn vbsemi
vbl165r18.pdf

VBL165R18www.VBsemi.comN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.36 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche en

6.2. Size:1406K cn vbsemi
vbm165r10 vbmb165r10 vbl165r10.pdf

VBM165R10 / VBMB165R10/ VBL165R10www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche ener

7.1. Size:895K cn vbsemi
vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf

VBM165R20S / VBMB165R20SVBP165R20S / VBL165R20Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ul

7.2. Size:1281K cn vbsemi
vbl165r04.pdf

VBL165R04 www.VBsemi.comN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to

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