All MOSFET. VBL165R12 Datasheet

 

VBL165R12 Datasheet and Replacement


   Type Designator: VBL165R12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65(typ) Ohm
   Package: TO263
 

 VBL165R12 substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBL165R12 Datasheet (PDF)

 ..1. Size:1339K  cn vbsemi
 vbm165r12 vbmb165r12 vbl165r12.pdf pdf_icon

VBL165R12

VBM165R12 / VBMB165R12/ VBL165R12www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)

 6.1. Size:1102K  cn vbsemi
 vbl165r18.pdf pdf_icon

VBL165R12

VBL165R18www.VBsemi.comN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.36 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche en

 6.2. Size:1406K  cn vbsemi
 vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBL165R12

VBM165R10 / VBMB165R10/ VBL165R10www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche ener

 7.1. Size:895K  cn vbsemi
 vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf pdf_icon

VBL165R12

VBM165R20S / VBMB165R20SVBP165R20S / VBL165R20Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ul

SHOW MORE

Datasheet: VBFB165R07S , VBM165R10 , VBMB165R10 , VBE165R10 , VBFB165R10 , VBL165R10 , VBM165R12 , VBMB165R12 , IRF1010E , VBM165R18 , VBM165R20S , VBMB165R20S , VBP165R20S , VBL165R20S , VBM1680 , VBM16R02 , VBMB16R02 .

History: AP70T03GH-HF | KU310N10F | HM20N06KA | SSM3K335R | APT47N60BCFG | HSU0048 | CS50N06P

Keywords - VBL165R12 MOSFET datasheet

 VBL165R12 cross reference
 VBL165R12 equivalent finder
 VBL165R12 lookup
 VBL165R12 substitution
 VBL165R12 replacement

 

 
Back to Top

 


 
.