VBL165R20S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VBL165R20S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBL165R20S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 typ Ohm

Encapsulados: TO263

Búsqueda de reemplazo de VBL165R20S MOSFET

- Selecciónⓘ de transistores por parámetros

VBL165R20S datasheet

..1. Size:895K cn vbsemi
vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf pdf_icon

VBM165R20S / VBMB165R20S VBP165R20S / VBL165R20S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ul

7.1. Size:1102K cn vbsemi
vbl165r18.pdf pdf_icon

VBL165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.36 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche en

7.2. Size:1281K cn vbsemi
vbl165r04.pdf pdf_icon

VBL165R04 www.VBsemi.com N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to

7.3. Size:1406K cn vbsemi
vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener

Otros transistores... VBL165R10, VBM165R12, VBMB165R12, VBL165R12, VBM165R18, VBM165R20S, VBMB165R20S, VBP165R20S, IRFP260, VBM1680, VBM16R02, VBMB16R02, VBE16R02, VBFB16R02, VBM16R04, VBMB16R04, VBE16R04

VBL165R20S Todos los transistores